dmn 1019uvt document number: ds 37506 rev. 2 - 2 1 of 7 www.diodes.com april 2015 ? diodes incorporated dmn 1019uvt new product 12v n - channel enhancement mode mosfet p roduct summary v (br)dss r ds(on) max i d t a = +25c 12 v 10 m @ v gs = 4.5 v 10.7 a 12 m @ v gs = 2.5 v 9.8 a 14 m @ v gs = 1.8 v 9.1 a 18 m @ v gs = 1.5 v 8.0 a 41 m @ v gs = 1.2 v 5.3 a description this new generation mosfet has been designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? load switch ? dc - dc converters ? power management functions features ? low on - resistance ? esd protected gate ? totally lead - f ree & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note mechanical data ? case: tsot26 ? case material C molded plastic. ul flammability rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish - matte tin solderable per mil - std - 202, method 208 ? terminal connections: see diagram ? weight: 0.008 grams ( a pproximate) ordering information (note 4) part number case packaging dm n 1019u vt - 7 tsot26 3 , 000/tape & reel dm n 1019u vt - 13 tsot26 10, 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information date code key year 2015 201 6 20 17 201 8 201 9 20 20 20 21 20 22 code c d e f g h i j month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view pin configuration top view equivalent circuit t sot26 dm n = product type marking code ym or ym = date code marking y or y = year (ex: c = 20 15 ) m = month (ex: 9 = september) dm n y m e3 esd protected d s g g ate protection diode d d g d d s 1 2 3 6 5 4
dmn 1019uvt document number: ds 37506 rev. 2 - 2 2 of 7 www.diodes.com april 2015 ? diodes incorporated dmn 1019uvt new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 12 v gate - source voltage v gss 8 v continuous drain current (note 5 ) v gs = 4.5 v steady state t a = + 25c t a = + 70c i d 10.7 8.6 a t<10s t a = + 25c t a = + 70c i d 12.7 10.1 a pulsed drain curren t ( 10 s p ulse, d uty c ycle = 1% ) i dm 70 a maximum body diode forward current (note 5 ) i s 2 a avalanche current (note 6 ) l = 0.1mh i as 9.7 a avalanche energy (note 6 ) l =0.1mh e as 4.7 mj thermal characteristics characteristic symbol value units total power dissipation (note 5 ) t a = + 25c p d 1. 73 w t a = + 70 c 1.11 thermal resistance, junction to ambient (note 5 ) steady s tate r ja 72.2 c/w t<10s 37.5 c/w thermal resistance, junction to case (note 5 ) r j c 14.4 c/w operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics ( @ t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 12 gs = 0v, i d = 250a zero gate voltage drain current i dss 1 a v ds = 12 v, v gs = 0v gate - body leakage i gss 2 a v gs = 8 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) 0.35 0.53 0.8 v v ds = v gs , i d = 250a static drain - source on - resistance r ds(on) 7 10 m gs = 4. 5 v, i d = 9.7 a 8 12 v gs = 2.5v, i d = 9 a 10 14 v gs = 1 . 8 v, i d = 8.1 a 14 18 v gs = 1. 5 v, i d = 4.5 a 28 41 v gs = 1. 2 v, i d = 2. 4 a diode forward voltage v sd 0. 8 1. 2 v v gs = 0v, i s = 10 a dynamic characteristics (note 8 ) input capacitance c iss 2588 pf v ds = 10 v, v gs = 0v , f = 1 mhz output capacitance c oss 415 pf reverse transfer capacitance c rss 394 pf gate resistance r g 1.1 ds = 0 v, v gs = 0v , f = 1mhz total gate charge (v gs = 8 v) q g 50. 4 nc v ds = 4 v, i d = 10 a total gate charge (v gs = 4.5 v ) q g 28.0 gate - source charge q gs 3.2 gate - drain charge q gd 5.6 turn - on delay time t d(on) 4.7 ns v d d = 4 v, v g en = 5 v, i d = 10a, r g = 1 l = 0.4 d(off) 32.2 ns turn - on rise time t r 3.7 ns turn - off fall time t f 11.6 ns body diode reverse recovery time t rr ? ? f = 10 a, di/dt = 10 0a/s rr ? ? f = 10 a, di/dt = 10 0a/s notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper pad . 6 . i a s and e a s rating are based on low frequency and duty cycles to keep t j = + 25c . 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
dmn 1019uvt document number: ds 37506 rev. 2 - 2 3 of 7 www.diodes.com april 2015 ? diodes incorporated dmn 1019uvt new product 0.0 5.0 10.0 15.0 20.0 25.0 0 1 2 3 4 5 i d , drain current (a) v ds , drain - source voltage (v) fig ure 1 typical output characteristic v gs =1.0v v gs =1.2v v gs =1.5v v gs =2.0v v gs =2.5v v gs =3.0v v gs =4.5v v gs =8.0v 0 2 4 6 8 10 0 0.5 1 1.5 2 i d , drain current (a) v gs , gate - source voltage (v) figure 2 typical transfer characteristic v ds =5.0v - 55 25 85 125 150 0 0.005 0.01 0.015 0.02 0 4 8 12 16 20 r ds(on) , drain - source on - resistance ( ) i d , drain - source current (a) figure 3 typical on - resistance vs drain current and gate voltage v gs =4.5v v gs =2.5v v gs =1.5v 0 0.01 0.02 0.03 0.04 0.05 1 2 3 4 5 6 7 8 r ds(on) , drain - source on - resistance ( ) v gs , gate - source voltage (v) figure 4 typical on - resistance vs drain current and gate voltage i d =4.5a i d =8.1a i d =9.7a 0 0.005 0.01 0.015 0 3 6 9 12 15 r ds(on) , drain - source on - resistance ( ) i d , drain current (a) figure 5 typical on - resistance vs drain current and temperature v gs =4.5v 150 125 - 55 25 85 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ) figure 6 on - resistance variation with temperature v gs =1.5v, i d =4.5a v gs =1.8v, i d =8.1a v gs =2.5v, i d =9a v gs =4.5v, i d =9.7a
dmn 1019uvt document number: ds 37506 rev. 2 - 2 4 of 7 www.diodes.com april 2015 ? diodes incorporated dmn 1019uvt new product 0 0.005 0.01 0.015 0.02 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - esistance (normalized ) t j , junction temperature ( ) figure 7 on - resistance variation with temperature v gs =1.5v, i d =4.5a v gs =1.8v, i d =8.1a v gs =2.5v, i d =9a v gs =4.5v, i d =9.7a 0 0.3 0.6 0.9 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate theshold voltage (v) t j , junction temperature ( ) figure 8 gate theshold variation vs junction temperature i d =250 a i d =1ma 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 i s , source current (a) v sd , source - drain voltage (v) figure 9 diode forward voltage vs current t a = - 55 t a =25 t a =85 t a =125 t a =150 v gs =0v 1 10 100 1000 10000 100000 1 2 3 4 5 6 7 8 9 10 11 12 i dss , leakage current (na) v ds , drain - source voltage (v) figure 10 typical drain - source leakge current vs voltage 25 85 125 150 100 1000 10000 0 2 4 6 8 10 12 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 11 typical junction capacitance f=1mhz c iss c oss c rss 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 v gs (v) q g (nc) figure 12 gate charge v ds =4v, i d =10a
dmn 1019uvt document number: ds 37506 rev. 2 - 2 5 of 7 www.diodes.com april 2015 ? diodes incorporated dmn 1019uvt new product 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 13 soa, safe operation area t j(max) = 150 t a = 25 v gs = 4 . 5 v single pulse dut on 1 *mrp board r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 14 transient thermal resistance r ja (t)=r(t) * r ja r ja =107 /w duty cycle, d=t1 / t2 d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.7 d=0.9
dmn 1019uvt document number: ds 37506 rev. 2 - 2 6 of 7 www.diodes.com april 2015 ? diodes incorporated dmn 1019uvt new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. tsot26 dim min max typ a ? ? 1.00 ? a1 0.01 0.10 ? a2 0.84 0.90 ? d ? ? 2.90 e ? ? 2.80 e1 ? ? 1.60 b 0.30 0.45 ? c 0.12 0.20 ? e ? ? 0.95 e1 ? ? 1.90 l 0.30 0.50 l2 ? ? 0.25 0 8 4 1 4 12 ? all dimensions in mm dimensions value (in mm) c 0.950 x 0.700 y 1.000 y1 3.199 c a1 l e1 e a2 d e1 e 6x b ? 4x 1 ?? l2 a y1 c c x (6x) y (6x)
dmn 1019uvt document number: ds 37506 rev. 2 - 2 7 of 7 www.diodes.com april 2015 ? diodes incorporated dmn 1019uvt new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indem nify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applic ation. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this d ocument is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are spe cifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or syst ems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custo mers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support device s or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cu stomers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.di odes.com
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